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P539D Insulated Gate Bipolar Transistor Original 600V 10A – Soluciones Electrónicas CR
P539D Insulated Gate Bipolar Transistor Original 600V 10A

P539D Insulated Gate Bipolar Transistor Original 600V 10A

Hoja de datos: P539D.pdf

SKU: 0025 Categoría:

Disponibilidad: 3 disponibles

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C

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