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2SK3878 Silicon N-Channel MOS – Soluciones Electrónicas CR
2SK3878 Silicon N-Channel MOS

2SK3878 Silicon N-Channel MOS

Hoja de datos: 2SK3878.pdf

SKU: 3247 Categoría:

Disponibilidad: 2 disponibles

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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